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Wu, Liang;Weizel, Maxim;Scheytt, Christoph:

Above 60 GHz Bandwidth 10 GS/s Sampling Rate Track-and-Hold Amplifier in 130 nm SiGe BiCMOS Technology.

In: 2020 IEEE International Symposium on Circuits and Systems (ISCAS), Sevilla, Spain, Oct 10 - 21, 2020, IEEE

Abstract

This paper presents a broadband track-and-hold amplifier (THA) based on switched-emitter-follower (SEF) topology. The THA exhibits both large- and small-signal bandwidth exeeding 60 GHz. It achieves an effective number of bits (ENOB) of 7 bit at 34 GHz input frequency and an ENOB of >5 bit over the whole input frequency bandwidth at sampling rate of 10 GS/s. Much higher sampling rates are possible but lead to somewhat worse performance. The chip was fabricated in a 130 nm SiGe BiCMOS technology from IHP (SG13G2). It draws 78 mA from a -4.8 V supply voltage, dissipating 375 mW.

Weblink

https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9180947

Bibtex

@inproceedings{hniid=10204,
author = {Wu, Liang and Weizel, Maxim and Scheytt, Christoph},
title = {Above 60 GHz Bandwidth 10 GS/s Sampling Rate Track-and-Hold Amplifier in 130 nm SiGe BiCMOS Technology},
booktitle = {2020 IEEE International Symposium on Circuits and Systems (ISCAS)},
address = {Sevilla, Spain},
publisher = {IEEE},
month = {10~-~21~} # oct,
year = {2020},
}

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Permalink

https://www.hni.uni-paderborn.de/pub/10204